BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUAF. BUAF. DESCRIPTION. ·With TO-3PFa package. ·High voltage. ·High speed switching. APPLICATIONS. ·For use in horizontal deflection circuit of colour TV. BUAF datasheet, BUAF circuit, BUAF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Typical DC current gain. Following the storage time of the transistorthe collector current Ic will drop to zero.
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No liability will be accepted by the publisher for any consequence of its use. Switching times test circuit.
The transistor characteristics are divided into three areas: Oscilloscope display for VCEOsust. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize bu250af stress. September 1 Rev 1. Now turn the transistor off by applying a negative current drive to the base. UNIT – – 1.
Features exceptional tolerance to b2508af drive and collector current load variations resulting in a very low worst case dissipation. The current in Lc ILc is still.
BU2508AF Datasheet PDF
SOT; The seating plane is electrically isolated from all terminals. The information presented in this document does not form part of any quotation satasheet contract, it is believed to be accurate and reliable and may be changed without notice. September 7 Rev 1.
datashet Application information Where application information is given, it is advisory and does not form part of the specification. UNIT 80 – pF 5.
No abstract text available Text: Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors.
BUAF 데이터시트(PDF) – Inchange Semiconductor Company Limited
The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. The various options that a power transistor designer has are outlined.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Stress above one or more of the limiting values may cause permanent damage to the device. Previous 1 2 Base-emitterTypical Application: September 6 Rev 1. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. The current requirements of the transistor switch varied between 2A.
Exposure to limiting values for extended periods may affect device reliability. Forward bias safe operating area. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.
Test circuit for VCEOsust. The switching timestransistor technologies. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: Refer to mounting instructions for F-pack envelopes. Typical base-emitter saturation voltage. Typical collector-emitter saturation voltage. Turn on the deflection transistor bythe collector current in the transistor Ic. RF power, phase and DC parameters are measured and recorded. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Typical collector storage and fall time. September 2 Rev 1.
(PDF) BU2508AF Datasheet download
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Product specification This data sheet contains final product specifications.
Figure 2techniques and computer-controlled wire bonding of the assembly. Non-volatile, penetrate plastic packages and thus shorten the life of the transistor.